PTF10041 RF power LD MOSFET, 26V, 12W - ERICSSON

RF power LD MOSFET, 26V, 12W

SPECIFICATIONS:

    Input voltage: 26V
    Gate-Source voltage: ±20V
    Drain-Source voltage: 65V
    Output power: 12W
    Total device dissipation: 58W
    Power gain: 10dB @ 1930 MHz, 26V, 155mA, Pout 3W

This power FET is available for use in the 400 MHz - 2.4 GHz band at a very affordable price. Due to the remarkable development of 1.9 GHz band base stations for cellular and other wireless infrastructure, now are available devices with a professional ceramic case at costs so far unthinkable. This FET for medium power applications up to 2.4 GHz is currently the best compromise between cost and quality. Of course you can also use them starting form 100 MHz but we believe more convenient an usage over 400 MHz, in fact the device is not pre-matched and so it can work very well on broadband circuits.

WARNING: due to the high gain and low frequencies we suggest (like for all wide band devices) to limit gain for lower frequencies. In fact the circuit below is not the best obtainable in performances for PTF10041 at 1.3 GHz but it is very stable because it has not self-oscillations and it gives a weaker amplification at lower frequencies.

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