IRF520N
€0.70
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Transistor type: N-MOSFET
Technology: HEXFET®
Polarization: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Dissipated Power: 48W
Housing: TO220AB
Gate-source voltage: ± 20V
Resistance in transfer state: 0.2Ω
Mount: THT
Gate charge: 16.7nC
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