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Silicon RF Schottky diode featuring low forward voltage, very low junction capacitance and low inductance. The BAT15-02LS is rated for a maximum reverse voltage of 4 V and forward current of 110 mA, making it suitable for mixers and detectors operating at frequencies up to 12 GHz.
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The Infineon BAT15-02LS, supplied under the full ordering reference BAT1502LSE6433XTMA1, is a low-barrier Schottky diode designed for radio-frequency and microwave circuits.
Its low forward voltage, extremely low junction capacitance and reduced parasitic inductance make it suitable for RF mixers, detectors, demodulators and power-detection circuits, including applications operating at frequencies up to 12 GHz.
The device features an integrated on-chip guard ring for overvoltage protection, providing increased robustness in sensitive RF circuits. It has a capacitance of approximately 0.23 pF at 0 V and 1 MHz and a typical inductance of only 0.2 nH.
The BAT15-02LS is supplied in an ultra-compact 0201 (0603 metric) package for surface mounting in equipment where PCB space and parasitic elements must be minimised.
The BAT15-02LS is specifically designed for radio-frequency signals. It should not be confused with a power Schottky diode or used as a general-purpose power rectifier.
Its maximum reverse voltage is only 4 V, and its maximum power dissipation is 100 mW. These limits must not be exceeded.
The 0201 package is extremely small, measuring approximately 0.6 × 0.3 mm. Installation and replacement require suitable SMD microsoldering equipment, controlled temperature and electrostatic-discharge protection.
Always verify the polarity, PCB footprint and electrical limits stated in the datasheet before installation.
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