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Infineon BAT15-02LS 4 V 110 mA RF Schottky Diode
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  • Infineon BAT15-02LS 4 V 110 mA RF Schottky Diode

BAT15-02LS 4 V 110 mA Infineon RF Schottky Diode – 0201 SMD

€0.95

Silicon RF Schottky diode featuring low forward voltage, very low junction capacitance and low inductance. The BAT15-02LS is rated for a maximum reverse voltage of 4 V and forward current of 110 mA, making it suitable for mixers and detectors operating at frequencies up to 12 GHz.

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The Infineon BAT15-02LS, supplied under the full ordering reference BAT1502LSE6433XTMA1, is a low-barrier Schottky diode designed for radio-frequency and microwave circuits.

Its low forward voltage, extremely low junction capacitance and reduced parasitic inductance make it suitable for RF mixers, detectors, demodulators and power-detection circuits, including applications operating at frequencies up to 12 GHz.

The device features an integrated on-chip guard ring for overvoltage protection, providing increased robustness in sensitive RF circuits. It has a capacitance of approximately 0.23 pF at 0 V and 1 MHz and a typical inductance of only 0.2 nH.

The BAT15-02LS is supplied in an ultra-compact 0201 (0603 metric) package for surface mounting in equipment where PCB space and parasitic elements must be minimised.

Main features

  • Manufacturer: Infineon Technologies
  • Full ordering reference: BAT1502LSE6433XTMA1
  • Component designation: BAT15-02LS
  • Type: RF Schottky diode
  • Configuration: single diode
  • Semiconductor material: silicon
  • Maximum reverse voltage: 4 V
  • Maximum forward current: 110 mA
  • Maximum power dissipation: 100 mW
  • Low forward voltage: approximately 0.25 V typical
  • Capacitance: approximately 0.23 pF at 0 V/1 MHz
  • Typical inductance: 0.2 nH
  • Resistance: approximately 10 Ω at 50 mA/1 MHz
  • Application frequency: up to 12 GHz
  • Maximum junction temperature: +150°C
  • Mounting type: surface mount
  • Supplier package: PG-TSSLP-2-3
  • Standard package size: 0201/0603 metric
  • Number of terminals: 2
  • Integrated protection: on-chip overvoltage guard ring
  • Packaging: cut tape or reel

Recommended applications

  • RF mixers
  • RF detectors and demodulators
  • RF power and signal-level detectors
  • Microwave circuits operating up to 12 GHz
  • Telecommunications equipment
  • Radio receivers and transmitters
  • Amateur-radio equipment
  • RF test and measurement instruments
  • Radar and wireless communication circuits
  • Repair of compatible RF modules

Important note

The BAT15-02LS is specifically designed for radio-frequency signals. It should not be confused with a power Schottky diode or used as a general-purpose power rectifier.

Its maximum reverse voltage is only 4 V, and its maximum power dissipation is 100 mW. These limits must not be exceeded.

The 0201 package is extremely small, measuring approximately 0.6 × 0.3 mm. Installation and replacement require suitable SMD microsoldering equipment, controlled temperature and electrostatic-discharge protection.

Always verify the polarity, PCB footprint and electrical limits stated in the datasheet before installation.

009924

Data sheet

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EL0017

Specific References

MPN
BAT1502LSE6433XTMA1

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