The Infineon BAT15-099, supplied under the full ordering reference BAT15099E6433HTMA1, integrates two electrically independent low-barrier Schottky diodes with a pin arrangement suitable for anti-parallel RF circuits.

Its low forward voltage, reduced junction capacitance and low parasitic inductance make it particularly suitable for RF mixers, detectors, modulators and phase-detection circuits, including microwave applications operating at frequencies up to 12 GHz.

Each diode is rated for a maximum reverse voltage of 4 V and a maximum forward current of 110 mA. The device has a typical capacitance of approximately 0.29 pF and a typical inductance of 2 nH.

An integrated on-chip overvoltage guard ring provides additional robustness in sensitive RF circuits. The device is supplied in an industry-standard, four-pin SOT-143 surface-mount package.

Main features

• Manufacturer: Infineon Technologies
• Full ordering reference: BAT15099E6433HTMA1
• Device designation: BAT15-099
• Type: dual RF Schottky diode
• Number of diodes: 2
• Configuration: independent diodes with anti-parallel pin arrangement
• Semiconductor material: silicon
• Maximum reverse voltage: 4 V
• Maximum forward current: 110 mA
• Maximum power dissipation: 100 mW
• Typical forward voltage: approximately 0.25 V
• Maximum forward voltage: approximately 0.32 V under specified conditions
• Typical capacitance: approximately 0.29 pF at 0 V/1 MHz
• DigiKey-listed capacitance: 0.35 pF at 0 V/1 MHz
• Typical inductance: 2 nH
• Application frequency: up to 12 GHz
• Operating temperature: −55°C to +150°C
• Maximum junction temperature: +150°C
• Mounting type: surface mount
• Supplier package: PG-SOT-143-3D
• Equivalent package designation: TO-253-4/TO-253AA
• Number of terminals: 4
• Integrated protection: on-chip overvoltage guard ring
• Compliance: RoHS compliant, lead-free and halogen-free
• Packaging: cut tape or tape and reel

Recommended applications

• Radio-frequency mixers
• DBS mixers operating up to 12 GHz
• RF detectors and demodulators
• Phase detectors
• Modulators
• RF power and signal-level detectors
• Telecommunications equipment
• Amateur-radio and radio equipment
• RF test and measurement instruments
• Microwave and radar circuits
• Repair of compatible RF modules

Important note

This component contains two electrically independent Schottky diodes, with a terminal arrangement suitable for anti-parallel operation. Check the datasheet connection diagram and verify the orientation of all four terminals before assembly.

The BAT15-099 is designed specifically for radio-frequency circuits. It should not be used as a power rectifier or as a replacement for a conventional Schottky diode without verifying its electrical characteristics.

Its maximum reverse voltage is only 4 V, and its maximum power dissipation is 100 mW. These limits must not be exceeded.