STGW60H65DRF Transistor IGBT
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  • STGW60H65DRF Transistor IGBT

STGW60H65DRF Transistor IGBT

€10.00
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immediate delivery

 

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Case / Cabinet: TO-247
Mounting Style: Through Hole
Collector - VCEO max. emitter voltage: 650V
Collector - emitter saturation voltage: 1.9 V
Maximum gate emitter voltage: 20V
Collector direct current at 25ºC: 120 A
Pd - Power dissipation: 360 W
Series: STGW60H65DRF
Packing: Tube
Brand: STMicroelectronics
Gate leakage current - emitter: 250 nA
Product Type: IGBT Transistors

DATASHEET

606500
New