FDT86256

Manufacturer: onsemi

Mounting Style: SMD/SMT

Case/Enclosure: SOT-223-4

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 150 V

Id - Continuous Drain Current: 1.2 A

Rds On - Drain-Source On-Resistance: 695 mOhms

Vgs - Gate-Source Voltage: -20 V, +20 V

Gate-Source Threshold Voltage: 3.5 V

Qg - Gate Charge: 1.2 nC

Minimum Operating Temperature: -55 C

Maximum Operating Temperature: +150 C

Pd - Power Dissipation: 2.3 W

Configuration: Single

Fall Time: 2.6 ns

Forward Transconductance - Min: 0.3 S

Height: 1.8 mm

Length: 6.5 mm

Product Type: MOSFETs

Rise Time: 1.7 ns

Width: 3.5 mm