BSS123NH6327XTSA1 - MOSFET N-Ch 100V 190mA SOT-23-3

Mounting style: SMD/SMT

Box/Enclosure: SOT-23-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds - Breakdown voltage between drain and source: 100 V

Id - Continuous drain current: 190 mA

Rds On - Drain source on resistance: 6 Ohms

Vgs - Port and source voltage: - 20 V, + 20 V

Gate and source threshold voltage: 1.4 V

Qg - Port load: 600 pC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd - Power dissipation: 500 mW

Channel Mode: Enhancement

Qualification: AEC-Q101

Series: BSS123

Brand: Infineon Technologies

Configuration: Single

Fall time: 22 ns

Forward transconductance - Min: 410 mS

Height: 1.1mm

Length: 2.9mm

Product Type: MOSFET

Rise time: 3.2 ns

Transistor Type: 1 N-Channel

Typical power-off delay time: 7.4 ns

Typical activation/delay time: 2.3 ns

Width: 1.3mm

DATASHEET